features ? isolated hermetic metal package ? high input impedance ? low on-voltage ? high current capability ? fast turn-off ? low conductive losses ? available screened to mil-s-19500, tx, txv and s levels description the igbt power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. these devices are ideally suited for motor drives, ups converters, power supplies and resonant power converters. maximum ratings @ 25c unless specified otherwise part i c (cont.) v (br)ces v ce (sat) (typ.) t f (typ.) q q jc p d t j number @ 90c, a v v ns c/w w c om6503sc 20 500 2.8 400 1.75 72 150 OM6504SC 30 500 2.8 400 1.00 125 150 3.1 - 141 3.1 500 volt, 20 and 30 amp, n-channel igbt in a hermetic metal package 4 11 r2 supersedes 2 07 r1 insulated gate bipolar transistor (igbt) in a hermetic to-258aa package om6503sc OM6504SC schematic .707 .697 .750 .500 .835 .815 .695 .685 .165 .155 .200 typ. .550 .530 .270 .240 .045 .035 .140 typ. .092 max. .065 .055 .005 pin 1: collector pin 2: emitter pin 3: gate collector emitter 12 3 ce g gate mechanical outline note: igbts are also available in z-tab, dual and quad pak styles. please call the factory for more information. package options mod pak 6 pin sip
3.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 om6503sc - OM6504SC preliminary data: om6503sc igbt characteristics parameter - off min. typ. max. units test conditions v (br)ces collector emitter 500 v v ce = 0 breakdown voltage i c = 250 a i ces zero gate voltage 0.25 ma v ce = max. rat., v ge = 0 drain current 1.0 ma v ce = 0.8 max. rat., v ge = 0 t c = 125c i ges gate emitter leakage 100 na v ge = 20 v current v ce = 0 v parameter - on v ge(th) gate threshold voltage 2.0 4.0 v v ce = v ge , i c = 250 a v ce(sat) collector emitter 3.0 v v ge = 15 v, i c = 20 a saturation voltage t c = 25c v ce(sat) collector emitter 2.8 3.0 v v ge = 15 v, i c = 20 a saturation voltage t c = 100c dynamic g fs forward transductance 5.0 s v ce = 20 v, i c = 20 a c ies input capacitance 1700 pf v ge = 0 c oes output capacitance 215 pf v ce = 25 v c res reverse transfer capacitance 115 pf f = 1 mhz switching-resistive load t d(on) turn-on time 60 ns v cc = 400 v, i c = 20 a t r rise time 240 ns v ge = 15 v, r g = 47 switching-inductive load t r(volt) off voltage rise time .55 s v ceclamp = 400 v, i c = 20 a t f fall time .60 s v ge = 15 v, r g = 100 t cross cross-over time 1.2 s l = 0.1 mh, t j = 100c e off turn-off losses 3.0 mj preliminary data: OM6504SC igbt characteristics parameter - off min. typ. max. units test conditions v (br)ces collector emitter 500 v v ce = 0 breakdown voltage i c = 250 a i ces zero gate voltage 0.25 ma v ce = max. rat., v ge = 0 drain current 1.0 ma v ce = 0.8 max. rat., v ge = 0 t c = 125c i ges gate emitter leakage 100 na v ge = 20 v current v ce = 0 v parameter - on v ge(th) gate threshold voltage 2.0 4.0 v v ce = v ge , i c = 250 a v ce(sat) collector emitter 3.0 v v ge = 15 v, i c = 30 a saturation voltage t c = 25c v ce(sat) collector emitter 2.8 3.0 v v ge = 15 v, i c = 30 a saturation voltage t c = 125c dynamic g fs forward transductance 8.0 s v ce = 15 v, i c = 30 a c ies input capacitance 3500 pf v ge = 0 c oes output capacitance 250 pf v ce = 25 v c res reverse transfer capacitance 50 pf f = 1 mhz switching-resistive load t d(on) turn-on time 100 ns v cc = 400 v, i c = 30 a t r rise time 200 ns v ge = 15 v, r g = 100 t d(off) turn-off delay time 1.0 s t j = 125c t f fall time 2.0 s switching-inductive load t d(off) turn-off delay time 1.0 ns v ceclamp = 400 v, i c = 30 a t f current fall time 3.0 s v ge = 15 v, r g = 100 l = 0.1 mh, t j = 125c
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